MT17: the 2017 midterm
The Fall 2017 midterm (November 1, 2017; 150 points). Work through it in order: each part gives its question in short and links to the page that solves it. The exam ways of M3, M5 and M6 come with their rebuild in early December; until then, use the full solutions and the playbook.
16 parts: all solved in the guide.
MT17-1
MT17-1a (8 points)
What does fanout do to the static DC noise margin of a CMOS gate? Explain.
MT17-1b (8 points)
An inverter’s PFET has its n-well tied to ground, with V and . Does static DC current flow? Explain.
MT17-1c (8 points)
An NFET carries 10 µA at V. Find at at 300 K (60 mV/decade), and again at 400 K.
MT17-2 (16 points)
Label three inverter VTCs by their sizes (4/1, 2/1 and 1/1 µm) and explain; which has the largest ?
MT17-3
MT17-3a (8 points)
With equal-strength devices, an inverter with a 2 µm PFET and a 1 µm NFET drives 50 fF: its rising and falling delays in units of .
MT17-3b (8 points)
The same with an 8 µm PFET and a 1 µm NFET.
MT17-3c (8 points)
A dynamic gate’s A-rising-to-Y-falling delay in evaluation (clk = 1, B = 1).
MT17-3d (8 points)
A four-input NAND’s rising and falling delays with B = C = D = 1.
MT17-4
MT17-4a (8 points)
Four 2W/W inverters with no wiring capacitance (): the delay from A to B. Does it depend on W? Why?
MT17-4b (10 points)
With wiring capacitance between stages: the delay as a function of W and , and the W that minimizes it.
MT17-4c (10 points)
The dynamic energy of one transition through the chain, as a function of W and .
MT17-4d (10 points)
The W that minimizes energy × delay.
MT17-5
MT17-5a (10 points)
A four-gate path with PFETs half as strong as NFETs: the A-to-E delay with every width 1 µm.
MT17-5b (10 points)
Keep µm and size – for minimum delay; give the new delay.
MT17-5c (10 points)
A branch inverter is added: the delay with the sizes of (b).
MT17-5d (10 points)
Retune the modified circuit, still fixed, and give the new delay.